A5G35S008N Description
A5G35S008N Airfast RF Power GaN Transistor Rev. 2 November 2022 This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz. 3500 MHz Typical Single−Carrier W−CDMA Reference Circuit Performance:.
A5G35S008N Key Features
- High terminal impedances for optimal broadband performance
- Designed for low plexity linearization systems
- Universal broadband driver
- Optimized for massive MIMO active antenna systems for 5G base stations
- 65 to +150
- 55 to +150