Click to expand full text
A5G35S008N
Airfast RF Power GaN Transistor
Rev. 2 — November 2022
This 27 dBm RF power GaN transistor is designed for cellular base station applications covering the frequency range of 3300 to 3800 MHz.
3500 MHz
• Typical Single−Carrier W−CDMA Reference Circuit Performance: VDD = 48 Vdc, IDQ = 24 mA, Pout = 27 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency
Gps (dB)
hD
Output PAR
ACPR
(%)
(dB)
(dBc)
3300 MHz
20.9
18.3
10.1
–41.0
3400 MHz
20.9
18.0
9.9
–41.0
3500 MHz
20.9
18.0
9.8
–42.3
3600 MHz
20.2
17.9
9.7
–43.6
3700 MHz
19.3
17.6
9.6
–44.5
3800 MHz
18.4
16.7
9.6
–44.8
1. All data measured in reference circuit with device soldered to printed circuit board.
A5G35S008N Datasheet
