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AFT05MS003N - RF Power LDMOS Transistor

Key Features

  • Characterized for Operation from 1.8 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment. Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (dBm) (dB) (%) (W) 136–174 (1,4) 17.8 17.1 67.1 3.2 350–520 (2,4) 20.0 15.1 73.0 3.2 Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (3) 20.8 68.3 3.