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AFT05MS003N Datasheet Rf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, mon--source amplifier applications in handheld radio equipment. Wideband Performance (7.5 Vdc, TA = 25C, CW) Frequency Pin Gps D Pout (MHz) (dBm) (dB) (%) (W) 136–174 (1,4) 17.8 17.1 67.1 3.2 350–520 (2,4) 20.0 15.1 73.0 3.2 Narrowband Performance (7.5 Vdc, TA = 25C, CW) Frequency (MHz) Gps D Pout (dB) (%) (W) 520 (3) 20.8 68.3 3.0 Load Mismatch/Ruggedness Frequency Signal (MHz) Type VSWR Pin (dBm) Test Voltage Result 520 (3) CW > 65:1 at all Phase Angles 21.1 9.0 No Device Degradation 1. Measured in 136–174 MHz VHF broadband reference circuit. 2. Measured in 350–520 MHz UHF broadband reference circuit. 3. Measured in 520 MHz narrowband production test circuit. 4. The values shown are the center band performance numbers across the indicated frequency range.

Key Features

  • Characterized for Operation from 1.8 to 941 MHz.
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization.
  • Integrated ESD Protection.
  • Integrated Stability Enhancements.
  • Wideband.
  • Full Power Across the Band.
  • Exceptional Thermal Performance.
  • Extreme Ruggedness Typical.

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