AFT05MS003N Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 1.8 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, mon--source amplifier applications in handheld radio equipment. Measured in 136 174 MHz VHF broadband...
AFT05MS003N Key Features
- Characterized for Operation from 1.8 to 941 MHz
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
- Integrated Stability Enhancements
- Wideband
- Full Power Across the Band
- Exceptional Thermal Performance
- Extreme Ruggedness