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AFT20S015GN - RF Power LDMOS Transistors

Download the AFT20S015GN datasheet PDF. This datasheet also covers the AFT20S015N variant, as both devices belong to the same rf power ldmos transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Greater negative gate--source voltage range for improved Class C operation.
  • Designed for digital predistortion error correction systems.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFT20S015N-NXP.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
AFT20S015N RF Power LDMOS Transistors
AFT23S160W02GSR3 RF Power LDMOS Transistors
AFT23S160W02SR3 RF Power LDMOS Transistors
AFT05MP075GNR1 RF Power LDMOS Transistors
AFT05MP075NR1 RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NXP Semiconductors Technical Data Document Number: AFT20S015N Rev. 2, 04/2020 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. 2100 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) 17.5 17.6 17.6 D Output PAR ACPR (%) (dB) (dBc) 22.0 8.9 --43.0 22.0 9.0 --44.0 22.0 9.1 --44.0 IRL (dB) --11 --12 --14 1800 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.