AFT20S015GN Description
NXP Semiconductors Technical Data Document Number: 2, 04/2020 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. 2100 MHz Typical Single--Carrier W--CDMA Performance:.
AFT20S015GN Key Features
- Greater negative gate--source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- Optimized for Doherty