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AFT20S015GN Datasheet Rf Power Ldmos Transistors

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

AFT20S015GN Overview

NXP Semiconductors Technical Data Document Number: AFT20S015N Rev. 2, 04/2020 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. 2100 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB) --11 --12 --14 1800 MHz  Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,  Greater negative gate--source voltage range for improved Class C operation  Designed for digital predistortion error correction systems  Optimized for Doherty applications AFT20S015N AFT20S015GN 1805–2700 MHz, 1.5 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTORS

AFT20S015GN Key Features

  • Greater negative gate--source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty

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