Overview: NXP Semiconductors Technical Data Document Number: AFT20S015N Rev. 2, 04/2020 RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz. 2100 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2110 MHz 2140 MHz 2170 MHz Gps (dB)
17.5 17.6 17.6 D Output PAR ACPR (%) (dB) (dBc) 22.0 8.9 --43.0 22.0 9.0 --44.0 22.0 9.1 --44.0 IRL (dB)
--11 --12 --14 1800 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) IRL (dB) 1805 MHz 18.0 21.0 9.2 --42.0 --11 1840 MHz 18.1 22.0 9.2 --44.0 --10 1880 MHz 18.0 22.0 9.1 --45.0 --10 2600 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 132 mA, Pout = 2.1 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) D Output PAR ACPR (%) (dB) (dBc) IRL (dB) 2300 MHz 15.7 23.0 9.0 --45.0 --6 2400 MHz 16.0 23.0 8.8 --44.0 --7 2500 MHz 15.8 23.0 8.6 --43.0 --6 2600 MHz 15.8 21.0 8.5 --43.0 --7 2700 MHz 15.5 20.0 8.4 --42.
