AFT20S015N Overview
Key Features
- Greater negative gate--source voltage range for improved Class C operation
- Designed for digital predistortion error correction systems
- 2013, 2020 NXP B.V. RF Device Data NXP Semiconductors AFT20S015N AFT20S015GN
| Part | AFT20S015N |
|---|---|
| Description | RF Power LDMOS Transistors |
| Category | Transistor |
| Manufacturer | NXP Semiconductors |
| Size | 737.05 KB |
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