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NXP Semiconductors Technical Data
Document Number: AFT20S015N Rev. 2, 04/2020
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 1.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 1805 to 2700 MHz.
2100 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency 2110 MHz 2140 MHz 2170 MHz
Gps (dB)
17.5 17.6 17.6
D
Output PAR ACPR
(%)
(dB)
(dBc)
22.0
8.9
--43.0
22.0
9.0
--44.0
22.0
9.1
--44.0
IRL (dB)
--11 --12 --14
1800 MHz Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,
IDQ = 132 mA, Pout = 1.5 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
AFT20S015N Datasheet
