• Part: BA423A
  • Description: AM band-switching diode
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 31.75 KB
Download BA423A Datasheet PDF
NXP Semiconductors
BA423A
FEATURES - Continuous reverse voltage: max. 20 V - Continuous forward current: max. 50 m A - Low diode capacitance: max. 2.5 p F - Low diode forward resistance: max. 1.2 Ω. APPLICATION - Band switching in AM radio receivers. The diodes are type branded. DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. k handbook, halfpage a MAM156 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. - - - 65 - MAX. 20 50 +150 150 V m A °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 125 °C Cd r D diode capacitance diode forward resistance f = 1 MHz; VR = 3 V; see Fig.4 IF = 10 m A; f = 1 MHz; see Fig.5 100 5 2.5 1.2 n A µA p F Ω...