NXP Semiconductors BA423AL
The cathode is indicated by a red band. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.| Part No. | BA423AL |
|---|---|
| Datasheet | BA423AL Download |
| Manufacturer |  NXP Semiconductors |
| Description | AM band-switching diode |
| Buy | Stock & Price |
FEATURES
● Continuous reverse voltage: max. 20 V● Continuous forward current: max. 50 mA
● Low diode capacitance: max. 2.5 pF
● Low diode forward resistance: max. 1.2 Ω. APPLICATION
● Band switching in AM radio receivers. handbook, 4 columns BA423AL
DESCRIPTION
Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. − − −65 − MAX. 20 50 +150 150 V mA °C °C UNITELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 125 °C Cd rD diode capacitance diode forward resistance f = 1 MHz; VR = 3 V; see Fig.4 IF = 10 mA; f = 1 MHz; see Fig.5 100 5 2.5 1.2 nA µA pF Ω CONDITIONS IF = 50 mA; see Fig.2 MAX.
