• Part: BA423AL
  • Description: AM band-switching diode
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 29.24 KB
Download BA423AL Datasheet PDF
NXP Semiconductors
BA423AL
FEATURES - Continuous reverse voltage: max. 20 V - Continuous forward current: max. 50 m A - Low diode capacitance: max. 2.5 p F - Low diode forward resistance: max. 1.2 Ω. APPLICATION - Band switching in AM radio receivers. handbook, 4 columns DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. - - - 65 - MAX. 20 50 +150 150 V m A °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 125 °C Cd r D diode capacitance diode forward resistance f = 1 MHz; VR = 3 V; see Fig.4 IF = 10 m A; f = 1 MHz; see Fig.5 100 5 2.5 1.2 n A µA p F Ω...