BA682 Datasheet | NXP Semiconductors

URES - Continuous reverse voltage: max. 35 V - Continuous forward current: max. 100 m A - Low diode capacitance: max. 1.5 p F - Low diode forward resistance: max. 0.7 to 1.2 Ω. MAM061 BA682; BA683 DESCRIPTION Planar high performance band-switching diodes in a glass SOD80 SMD package. handbook, 4 columns k a APPLICATION - Band-switching in VHF television tuners. Fig.1 Simplified outline (SOD80) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. - - - 65 - MAX. 35 100 +150 150 V m A °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 75 °C Cd Cd diode capacitance diode capacitance BA682 BA683 r D diode forward resistance BA682 BA683 r D diode forward resistance BA682 BA683 IF = 10 m A; f = 200 MHz; see Fig.5 0.5 0.9 Ω Ω IF = 3 m A; f = 200 MHz; see Fig.5 0.7 1.2 Ω Ω f = 1 MHz; VR = 1 V; see Fig.4 f = 1 MHz; VR = 3 V; see Fig.4 1.25 1.20 p F p F 50 1 1.5 n A µA p F CONDITIONS IF = 100 m A; see Fig.2 MAX. 1.0 V UNIT 1996 Mar 13 Philips Semiconductors Product specification Band-switching diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS BA682; BA683 VALUE 300 600 UNIT K/W K/W handbook, halfpage (1) (2) (3) MBG308 10 5 handbook, halfpage IR (n A) 10 4 MBG307 IF (m A) 10 3 50 10 2 0 0 0.5 1 V F (V)...