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BAS101 - High Voltage Switching Diodes

General Description

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.

Table 1.

Key Features

  • High switching speed: trr ≤ 50 ns.
  • Low leakage current.
  • Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS101; BAS101S High-voltage switching diodes Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP BAS101 SOT23 BAS101S SOT23 JEITA - Configuration single dual series 1.2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3 Applications „ High-speed switching „ High-voltage switching „ Low capacitance: Cd ≤ 2 pF „ Reverse voltage: VR ≤ 300 V „ Small SMD plastic package „ Voltage clamping „ Reverse polarity protection 1.4 Quick reference data Table 2.