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BAS101S - High Voltage Switching Diodes

Download the BAS101S datasheet PDF. This datasheet also covers the BAS101 variant, as both devices belong to the same high voltage switching diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.

Table 1.

Key Features

  • High switching speed: trr ≤ 50 ns.
  • Low leakage current.
  • Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BAS101_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NXP Semiconductors

Part Number Description
BAS101 High Voltage Switching Diodes
BAS11 Controlled avalanche rectifiers
BAS116H low leakage diode
BAS12 Controlled avalanche rectifiers
BAS15 High-speed diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BAS101; BAS101S High-voltage switching diodes Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package NXP BAS101 SOT23 BAS101S SOT23 JEITA - Configuration single dual series 1.2 Features „ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3 Applications „ High-speed switching „ High-voltage switching „ Low capacitance: Cd ≤ 2 pF „ Reverse voltage: VR ≤ 300 V „ Small SMD plastic package „ Voltage clamping „ Reverse polarity protection 1.4 Quick reference data Table 2.