BAS101S Datasheet PDF

FEATURES

„ High switching speed: trr ≤ 50 ns „ Low leakage current „ Repetitive peak reverse voltage: VRRM ≤ 300 V 1.3

APPLICATIONS

„ High-speed switching „ High-voltage switching „ Low capacitance: Cd ≤ 2 pF „ Reverse voltage: VR ≤ 300 V „ Small SMD plastic package „ Voltage clamping „ Reverse polarity protection 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current IR reverse current VR reverse voltage trr reverse recovery time Conditions Min Typ VR = 250 V [1] - - [1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. Max 200 150 300 50 Unit mA nA V ns NXP Semiconductors BAS101; BAS101S High-voltage switching diodes 2. Pinning information Table 3. Pin BAS101 1 2 3 Pinning

DESCRIPTION

anode not connected cathode BAS101S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) Simplified outline Symbol 3 12 3 12 006aaa764 3 12 3 12 006aaa763 3. Ordering information Table 4. Ordering information Type number Package Name

DESCRIPTION

BAS101 - plastic surface-mounted package; 3 leads BAS101S 4.