NXP Semiconductors BAS16
The marking bar indicates the cathode.FEATURES AND BENEFITS
● High switching speed: trr 4 ns● Low leakage current
● Repetitive peak reverse voltage: VRRM 100 V
● AEC-Q101 qualified
● Low capacitance
● Reverse voltage: VR 100 V
● Small SMD plastic packages 1.3
APPLICATIONS
● High-speed switching● General-purpose switching NXP Semiconductors BAS16 series High-speed switching diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VR reverse voltage - - 100 V IR reverse current VR = 80 V - - 0.5 A trr reverse recovery IF = 10 mA; IR = 10 mA; - - 4 ns time RL = 100 ; IR(meas) = 1 mA 2. Pinning information Table 3. Pinning Pin
DESCRIPTION
BAS16; BAS16T; BAS16W 1 anode 2 not connected 3 cathode BAS16H; BAS16J; BAS316; BAS516 1 cathode 2 anode BAS16L 1 2 cathode anode BAS16VV; BAS16VY 1 anode (diode 1) 2 anode (diode 2) 3 anode (diode 3) 4 cathode (diode 3) 5 cathode (diode 2) 6 cathode (diode 1) [1] The marking bar indicates the cathode.