BAS16VV
Key Features
- High switching speed: trr 4 ns
- Low leakage current
- Repetitive peak reverse voltage: VRRM 100 V
- AEC-Q101 qualified
- Part: BAS16VV
- Description: High-speed switching diodes
- Category: Diode
- Manufacturer: NXP Semiconductors
- Size: 196.81 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| BAS16V | SeCoS Halbleitertechnologie GmbH | Plastic-Encapsulated Transistors |
| BAS16V | JCET | SWITCHING DIODE |
| BAS16N3 | CYStech Electronics | High speed switching diode |
| BAS16LT1 | Leshan Radio Company | Switching Diode |
| BAS16S | Siemens Semiconductor Group | Silicon Switching Diode Array |
| BAS16TW | JCET | SWITCHING DIODE |
| BAS16WX | JCET | HIGH-SPEED SWITCHING DIODE |
| BAS16H | Eris Technology | Surface Mount Switching Diode |
| BAS16TDW | Weitron Technology | Surface Mount Switching Multi-Chip Diode Array |
| BAS16TW | LGE | Switching Diodes |