BAS16VV Key Features
- High switching speed: trr ≤ 4 ns
- Low capacitance
- Low leakage current
- Reverse voltage: VR ≤ 100 V
- Repetitive peak reverse voltage: VRRM ≤ 100 V
- Small SMD plastic packages
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BAS16VV | High-speed switching diodes |
Micro Commercial Components |
BAS16V | Switching Diodes |
WILLAS |
BAS16V | Plastic-Encapsulate Diodes |
SeCoS Halbleitertechnologie GmbH |
BAS16V | Plastic-Encapsulated Transistors |
JCET |
BAS16V | SWITCHING DIODE |