BAS21AW Datasheet | NXP Semiconductors

description High-voltage switching diodes, encapsulated in a very small Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Configuration BAS21W BAS21AW BAS21SW single dual mon anode dual series Package NXP SOT323 JEDEC SC-70 Package configuration very small 1.2 Features I High switching speed: trr ≤ 50 ns I Low leakage current I High reverse voltage: VR ≤ 250 V I Low capacitance: Cd ≤ 2 p F I Very small SMD plastic package I AEC-Q101 qualified 1.3 Applications I High-speed switching I General-purpose switching I Voltage clamping I Reverse polarity protection 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 200 V Min Typ [1] - [2] - - [1] Single diode loaded. [2] When switched from IF = 10 m A to IR = 10 m A; RL = 100 Ω; measured at IR = 1 m A. Max 225 100 250 50 Unit m A n A V ns NXP Semiconductors BAS21W series High-voltage switching diodes 2. Pinning information Table 3. Pinning Pin Description BAS21W 1 anode 2 not connected 3 cathode BAS21AW 1 2 3 cathode (diode 1) cathode (diode 2) mon anode BAS21SW 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) Simplified outline Graphic symbol 3 12 3 12 006aaa764 3...