NXP Semiconductors BAS55
The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package.FEATURES
● Small plastic SMD package● High switching speed: max. 6 ns
● Continuous reverse voltage: max. 60 V
● Repetitive peak reverse voltage: max. 60 V
● Repetitive peak forward current: max. 600 mA.
APPLICATIONS
● High-speed switching in surface mounted circuits. 3 Marking code: L5p. BAS55DESCRIPTION
PINNING PIN 1 2 3DESCRIPTION
anode not connected cathode handbook, halfpage 2 1 2 n.c. 3 MAM185 1 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 100 µs t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 9 3 1.7 250 +150 150 A A A mW °C °C see Fig.2; note 1 CONDITIONS MIN. − − − − MAX.