BAT18 Datasheet | NXP Semiconductors

description Planar high performance band-switching diode in a small rectangular SOT23 SMD plastic package. 1.2 Features s Continuous reverse voltage: max. 35 V s Continuous forward current: max. 100 m A s Low diode capacitance: max. 1.0 p F s Low diode forward resistance: max. 0.7 Ω. 1.3 Applications s Band switching. 2. Pinning information Table 1: Pin 1 2 3 Pinning Description anode not connected cathode Simplified outline Symbol 3 3 12 sym044 3. Ordering information Table 2: Ordering information Type number Package Name Description - plastic surface mounted package; 3 leads Version SOT23 Philips Semiconductors Silicon planar diode 4. Marking Table 3: Marking Type number BAT18 [1] - = p: made in Hong Kong - = t: made in Malaysia - = W: made in China. 5. Limiting values Marking code [1] 10- Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min VR continuous reverse voltage IF continuous forward current Tstg storage temperature Tj junction temperature - 55 - Max 35 100 +125 125 Unit V m A °C °C 6. Thermal characteristics Table 5: Thermal characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Rth(j-tp) Rth(j-a) thermal resistance from junction to tie-point thermal resistance from junction to ambient [1] Device mounted on a FR4 printed-circuit...