NXP Semiconductors BAT754S
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.| Part No. | BAT754S |
|---|---|
| Datasheet | BAT754S Download |
| Manufacturer |  NXP Semiconductors |
| Description | Schottky barrier double diodes |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low forward voltage● Low capacitance
● AEC-Q101 qualified 1.3
APPLICATIONS
● Ultra high-speed switching● Line termination
● Voltage clamping
● Reverse polarity protection 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Per diode VR reverse voltage VF forward voltage IF = 100 mA IR reverse current VR = 25 V [1] Pulse test: tp 300 s; 0.02. 2. Pinning information Min Typ Max Unit - - 30 V [1] - 600 - mV [1] - - 2 A Table 2. Pin BAT754 1 2 3 Pinning
DESCRIPTION
anode not connected cathode Simplified outline Graphic symbol 3 12 3 12 n.c. 006aaa436 NXP Semiconductors BAT754 series Schottky barrier diodes Table 2. Pinning …continued PinDESCRIPTION
BAT754A 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode BAT754C 1 2 3 anode (diode 1) anode (diode 2) common cathode BAT754S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) Simplified outline Graphic symbol 3 12 3 12 006aaa439 3 12 3 12 006aac984 3 12 3 12 006aaa437 3.
