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BAV199 - Low-leakage double diode

General Description

1 anode 2 cathode 3 anode; cathode APPLICATION

surface mounted circuits.

Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package.

The diodes are connected in series.

Key Features

  • Plastic SMD package.
  • Low leakage current: typ. 3 pA.
  • Switching time: typ. 0.8 µs.
  • Continuous reverse voltage: max. 75 V.
  • Repetitive peak reverse voltage: max. 85 V.
  • Repetitive peak forward current: max. 500 mA.

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📁 Similar Datasheet

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Other Datasheets by NXP Semiconductors

Part Number Description
BAV199W Low-leakage double diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Low-leakage double diode Product data sheet BAV199 FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. MARKING TYPE NUMBER BAV199 MARKING CODE(1) JY∗ Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. PINNING PIN DESCRIPTION 1 anode 2 cathode 3 anode; cathode APPLICATION • Low-leakage current applications in surface mounted circuits.