NXP Semiconductors BAV199
The diodes are connected in series.| Part No. | BAV199 |
|---|---|
| Datasheet | BAV199 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Low-leakage double diode |
| Buy | Stock & Price |
FEATURES
● Plastic SMD package● Low leakage current: typ. 3 pA
● Switching time: typ. 0.8 µs
● Continuous reverse voltage: max. 75 V
● Repetitive peak reverse voltage: max. 85 V
● Repetitive peak forward current: max. 500 mA. MARKING TYPE NUMBER BAV199 MARKING CODE(1) JY∗ Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. PINNING PIN
DESCRIPTION
1 anode 2 cathode 3 anode; cathode APPLICATION● Low-leakage current applications in surface mounted circuits.
DESCRIPTION
Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series. handbook, 4 columns 2 1 Top view 3 21 3 MAM107 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak...
