NXP Semiconductors BAV23
Dual high-voltage switching diodes
FEATURES AND BENEFITS
● High switching speed: trr 50 ns● Low leakage current
● Repetitive peak reverse voltage: VRRM 250 V
● Low capacitance: Cd 2 pF
● Small SMD plastic package 1.3
APPLICATIONS
● High-speed switching at high voltage● High-voltage general-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 200 V Min Typ [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 100 200 50 Unit nA V ns NXP Semiconductors 2. Pinning information Table 3. Pin BAV23A 1 2 3 Pinning
DESCRIPTION
cathode (diode 1) cathode (diode 2) common anode BAV23C 1 2 3 anode (diode 1) anode (diode 2) common cathode BAV23S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2) BAV23 1 2 3 4 cathode (diode 1) cathode (diode 2) anode (diode 2) anode (diode 1) BAV23 series Dual high-voltage switching diodes Simplified ou...