• Part: BAV23S
  • Description: Dual high-voltage switching diodes
  • Category: Diode
  • Manufacturer: NXP Semiconductors
  • Size: 107.91 KB
BAV23S Datasheet (PDF) Download
NXP Semiconductors
BAV23S

Description

BAV23A - plastic surface-mounted package; 3 leads BAV23C BAV23S BAV23 - plastic surface-mounted package; 4 leads 4. Marking codes Type number BAV23A BAV23C BAV23S BAV23 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.

Key Features

  • High switching speed: trr  50 ns
  • Low leakage current
  • Repetitive peak reverse voltage: VRRM  250 V
  • Low capacitance: Cd  2 pF
  • Small SMD plastic package 1.3 Applications
  • High-speed switching at high voltage
  • High-voltage general-purpose switching 1.4 Quick reference data Table
  • [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 100 200 50 Unit nA V ns NXP Semiconductors