NXP Semiconductors BAV70T
High-speed switching diodes
| Part No. | BAV70T |
|---|---|
| Datasheet | BAV70T Download |
| Manufacturer |  NXP Semiconductors |
| Description | High-speed switching diodes |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High switching speed: trr 4 ns● Low leakage current
● Small SMD plastic packages
● Low capacitance: Cd 1.5 pF
● Reverse voltage: VR 100 V
● AEC-Q101 qualified 1.3
APPLICATIONS
● High-speed switching● General-purpose switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V Min Typ [1] - - [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. Max 0.5 100 4 Unit A V ns NXP Semiconductors BAV70 series High-speed switching diodes 2. Pinning information Table 3. Pinning Pin
DESCRIPTION
BAV70; BAV70T; BAV70W 1 anode (diode 1) 2 anode (diode 2) 3 common cathode Simplified outline Symbol 3 3 BAV70M 1 2 3 anode (diode 1) anode (diode 2) common cathode BAV70S 1 2 3 4 5 6 anode (diode 1) anode (diode 2) common cathode (diode 3 and diode 4) anode (diode 3) anode (diode 4) common cathode (diode 1 and diode 2) 12 006aaa144 12 006aab034 1 3 2 Transparent top view 3 12 006aab034 654 654 123 123 006aab104 3.
