KEC BAV70T
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAV70T |
|---|---|
| Datasheet | BAV70T Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
Small Package : ESM. Low Forward Voltage : VF=0.9V (Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Continuous Forward Current IF 150 Surge Current (10ms) IFSM 2 Power Dissipation PD 200 * Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW A G H BAV70T SILICON EPITAXIAL PLANAR DIODE C E B 2 13 DIM MILLIMETERS A 1.60+_ 0.10 D B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10 H 0.50 J 0.13+_ 0.05 J 1. ANODE 1 2. ANODE 2 3. CATHODE 3 21 ESM Marking H2ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) VF(3) IR CT Reverse Recovery Time trr TEST CONDITION IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz IF=10mA MIN. - TYP. 0.60 0.72 - MAX. - 1.25 0.5 3.0 4.0 UNIT V A pF nS 2009.