The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR 80
Continuous Forward Current
IF 150
Surge Current (10ms)
IFSM
2
Power Dissipation
PD 200 *
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V V mA A mW
A G H
BAV70T
SILICON EPITAXIAL PLANAR DIODE
C
E B
2 13
DIM MILLIMETERS A 1.60+_ 0.10
D B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
J
1.
BAV70T Datasheet
