BAV70T
BAV70T is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
Features
Small Package
: ESM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
Reverse Voltage
VR 80
Continuous Forward Current
IF 150
Surge Current (10ms)
IFSM
Power Dissipation
PD 200
- Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note :
- Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V V mA A mW
SILICON EPITAXIAL PLANAR...
