BAV70
BAV70 is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
Features
Small Package : SOT-23. Low Forward Voltag : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms)
Power Dissipation
VRM VR IF IFSM
85 80 250 2 225- 300-
- Junction Temperature Storage Temperature Range
Tj 150 Tstg -55 150
- Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
- - Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm)
UNIT V V mA A mW
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM...
