KEC BAV70
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAV70 |
|---|---|
| Datasheet | BAV70 Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
Small Package : SOT-23. Low Forward Voltage : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.). Suffix U : Qualified to AEC-Q101. ex) BAV70-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) VRM 85 VR 80 IF 250 IFSM 2 Power Dissipation 225* PD 300** Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm) UNIT V V mA A mW A G H D E L B L 2 3 1 DIM A B C D E G H J K L M N Unit : mm MILLIMETERS 2.93 ± 0.20 1.30+0.20/-0.15 1.0+0.3/-0.1 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 ± 0.10 0.95 ± 0.10 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 ± 0.10 0.20 MIN 1.00+0.20/-0.10 C N K J 1. ANODE 1 2. ANODE 2 3. CATHODE M SOT-23 3 2 1 Marking Type Name H7 Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST C...
