NXP Semiconductors BC636
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BC636 |
|---|---|
| Datasheet | BC636 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP medium power transistors |
| Buy | Stock & Price |
FEATURES
● High current (max. 1 A)● Low voltage (max. 80 V).
APPLICATIONS
● Audio and video amplifiers.DESCRIPTION
PNP medium power transistor in a TO-92; SOT54 plastic package. NP complements: BC635, BC637 and BC639. 1 handbook, halfpage BC636; BC638; BC640 PINNING PIN 1 2 3 base collector emitterDESCRIPTION
2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC636 BC638 BC640 VCEO collector-emitter voltage BC636 BC638 BC640 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − − −65 − −65 −45 −60 −80 −5 −1 −1.5 −200 0.83 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − −45 −60 −100 V V V MIN.
