Siemens BC636
PNP Silicon AF Transistors
| Part No. | BC636 |
|---|---|
| Datasheet | BC636 Download |
| Manufacturer |  Siemens |
| Description | PNP Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Tj Tstg Values BC 636 45 45 Unit BC 638 60 60 5 1 1.5 100 200 0.8 (1) 150 – 65 … + 150 W ˚C mA A BC 640 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 55 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 636 … BC 640ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 636 BC 638 BC 640 Collector-base breakdown voltage IC = 100 µ...
