BC850B Datasheet (PDF) Download
NXP Semiconductors
BC850B

Key Features

  • Low current (max. 100 mA)
  • Low voltage (max. 45 V). APPLICATIONS
  • 65 - -65 30 45 5 100 200 200 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter
  • VBEsat decreases by about 1.7 mV/K with increasing temperature
  • PARAMETER BC849; BC850 VALUE 500 UNIT K/W TYP
  • MAX. 15 5 100
  • 450 800 250 600
  • 4 4 UNIT nA µA nA mV mV mV mV mV mV pF pF MHz dB dB IC = ic = 0; VEB = 500 mV; f = 1 MHz