BC850C Datasheet | NXP Semiconductors

FEATURES - Low current (max. 100 m A) - Low voltage (max. 45 V). APPLICATIONS - General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP plements: BC859 and BC860. MARKING TYPE NUMBER BC849B BC849C Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) 2B∗ 2C∗ TYPE NUMBER BC850B BC850C MARKING CODE(1) 2F∗ 2G∗ Top view handbook, halfpage BC849; BC850 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base - - - - - - - - 65 - - 65 30 45 5 100 200 200 250 +150 150 +150 V V V m A m A m A m W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter - - 30 50 V V MIN. MAX. UNIT 1999 Apr 08 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h FE PARAMETER collector cut-off current emitter cut-off current DC current gain BC849B; BC850B BC849C; BC850C DC current gain BC849B; BC850B BC849C; BC850C VCEsat VBEsat VBE Cc Ce f T F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 m A; IB = 0.5 m A IC = 100 m A; IB = 5 m A IC = 10 m A; IB = 0.5 m A; note 1 IC = 100 m A; IB = 5 m A; note 1 IC = 2 m A; VCE = 5 V; note 2 IC = 10 m A; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f =...