• Part: BC850C
  • Description: NPN Silicon AF Transistors
  • Category: Transistor
  • Manufacturer: Siemens Semiconductor Group
  • Size: 273.97 KB
Download BC850C Datasheet PDF
Siemens Semiconductor Group
BC850C
BC850C is NPN Silicon AF Transistors manufactured by Siemens Semiconductor Group.
Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 k Hz plementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type BC 846 A BC 846 B BC 847 A BC 847 B BC 847 C BC 848 A BC 848 B BC 848 C BC 849 B BC 849 C BC 850 B BC 850 C Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs Ordering Code (tape and reel) Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 Q62702-C1885 Q62702-C1712 Pin Configuration 1 2 3 B E C Package1) SOT-23 1)For detailed information see chapter Package Outlines. Semiconductor Group BC 846 ... BC 850 Maximum Ratings Parameter Symbol BC 846 Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Values BC 847 BC 850 45 50 50 6 100 200 200 200 330 150 Unit BC 848 BC 849 30 30 30 5 m A V VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg 65 80 80 6 m W ˚C - 65 … + 150 310 240 K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BC 846 ... BC 850 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 m A BC 846 BC 847, BC 850 BC 848, BC 849 Collector-base breakdown voltage IC = 10 µA BC 846 BC 847, BC 850 BC 848, BC 849 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 846 BC 847, BC 850 BC 848, BC 849 Emitter-base breakdown voltage IE = 1 µA BC 846, BC 847 BC 848, BC 849, BC 850 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C DC current gain IC = 10 µA, VCE = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B …...