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BCW60 Datasheet PDF

NXP Semiconductors BCW60

This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.
Part No. BCW60
Datasheet BCW60 Download
Manufacturer
NXP Semiconductors
Description NPN general purpose transistors
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BCW60 datasheet page 1 preview

FEATURES

● Low current (max. 100 mA)
● Low voltage (max. 32 V).

APPLICATIONS

● General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. handbook, halfpage BCW60 series PINNING PIN 1 2 3 base emitter collector

DESCRIPTION

3 3 1 MARKING TYPE NUMBER BCW60B BCW60C BCW60D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 32 32 5 100 200 200 250 +150 150 +150 MARKING CODE(1) AB∗ AC∗ AD∗ Top view 1 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol.
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