NXP Semiconductors BCW81
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.FEATURES
● Low current (max. 100 mA)● Low voltage (max. 45 V).
APPLICATIONS
● General purpose switching and high gain amplification.DESCRIPTION
NPN transistor in a SOT23 plastic package. 1 handbook, halfpage BCW81 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 MARKING TYPE NUMBER BCW81 MARKING CODE K3p Top view 1 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 420 100 MIN. MAX. 50 45 200 250 800 − MHz V V mA mW UNIT 1997 Apr 02 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltag...