NXP Semiconductors BDL31
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BDL31 |
|---|---|
| Datasheet | BDL31 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN BISS-transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 5 A)● Low voltage (max. 10 V)
● Low collector-emitter saturation voltage ensures reduced power consumption.
APPLICATIONS
● Battery powered units where high current and low power consumption are important.DESCRIPTION
1 BDL31 PINNING PIN 1 2 3 4 base not connected emitter collectorDESCRIPTION
handbook, halfpage 4 4 NPN BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. PNP complement: BDL32. 1 Top view 2 3 MAM372 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collect...
