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BDL31 - NPN BISS-transistor

Description

NPN BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package.

PNP complement: BDL32.

Fig.1 Simplified outline (SOT223) and symbol.

Features

  • High current (max. 5 A).
  • Low voltage (max. 10 V).
  • Low collector-emitter saturation voltage ensures reduced power consumption.

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Other Datasheets by NXP Semiconductors

Part Number Description
BDL32 PNP BISS-transistor

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BDL31 NPN BISS-transistor Product specification Supersedes data of 1998 Aug 03 1999 Apr 28 Philips Semiconductors Product specification NPN BISS-transistor FEATURES • High current (max. 5 A) • Low voltage (max. 10 V) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and low power consumption are important. DESCRIPTION 1 BDL31 PINNING PIN 1 2 3 4 base not connected emitter collector DESCRIPTION handbook, halfpage 4 4 NPN BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. PNP complement: BDL32. 1 Top view 2 3 MAM372 3 Fig.1 Simplified outline (SOT223) and symbol.
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