NXP Semiconductors BDL32
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BDL32 |
|---|---|
| Datasheet | BDL32 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP BISS-transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 5 A)● Low voltage (max. 10 V)
● Low collector-emitter saturation voltage ensures reduced power consumption.
APPLICATIONS
● Battery powered units where high current and low power consumption are important.DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. NPN complement: BDL31. PINNING PIN 1 2 3 4 base not connected emitter collectorDESCRIPTION
handbook, halfpage 4 4 1 3 1 Top view 2 3 MAM373 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector cur...
