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BDL32 - PNP BISS-transistor

Description

PNP BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package.

NPN complement: BDL31.

Fig.1 Simplified outline (SOT223) and symbol.

Features

  • High current (max. 5 A).
  • Low voltage (max. 10 V).
  • Low collector-emitter saturation voltage ensures reduced power consumption.

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Other Datasheets by NXP Semiconductors

Part Number Description
BDL31 NPN BISS-transistor

Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D087 BDL32 PNP BISS-transistor Product specification Supersedes data of 1998 Aug 03 1999 Apr 29 Philips Semiconductors Product specification PNP BISS-transistor BDL32 FEATURES • High current (max. 5 A) • Low voltage (max. 10 V) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and low power consumption are important. DESCRIPTION PNP BISS (Breakthrough In Small Signal) transistor in a SOT223 plastic package. NPN complement: BDL31. PINNING PIN 1 2 3 4 base not connected emitter collector DESCRIPTION handbook, halfpage 4 4 1 3 1 Top view 2 3 MAM373 Fig.1 Simplified outline (SOT223) and symbol.
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