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BF410D - N-channel silicon field-effect transistors

General Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range.

These FETs can be supplied in four IDSS groups.

Key Features

  • are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BF410A to D N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 December 1990 Philips Semiconductors Product specification N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks to these special features the BF410 is very suitable for applications such as the RF stages in FM portables (type A), car radios (type B) and mains radios (type C) or the mixer stage (type D).