BF419 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF419 NPN high-voltage transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistor Features - Low current (max. 100 m A) - High voltage (max. 250 V). APPLICATIONS - Driver for line output transistors in colour television receivers. handbook, halfpage PINNING PIN 1 2 3 emitter collector connected to mounting base base DESCRIPTION DESCRIPTION NPN high-voltage transistor in a TO-126; SOT32 plastic package. Top view MAM254 Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot h FE Cre f T PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb ≤ 90 °C IC = 20 m A; VCE = 10 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 15 m A; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS - - - - 45 - 90 TYP. MAX. 300 250 300 6 - 3.5 - p F MHz V V m A W UNIT 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistor LIMITING VALUES In accordance with the...