BF414 Datasheet | Siemens Semiconductor Group

BF 414 NPN Silicon RF Transistor q BF 414 For low-noise, mon base VHF and FM stages 2 3 1 Type BF 414 Marking - Ordering Code Q62702-F517 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA ≤ 45 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 30 40 4 25 3 300 150 - 55 … + 150 Unit V m A m W ˚C K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group BF 414 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 2 m A, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 20 V DC current gain IC = 4 m A, VCE = 10 V AC Characteristics Transition frequency IC = 1 m A, VCE = 10 V, f = 100 MHz IC = 5 m A, VCE = 10 V, f = 100 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 5 m A, VCE = 10 V, f = 100 MHz RS = 60 Ω f T - - Cce F - - 400 560 0.1 3 - - - - p F d B MHz V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 h FE 30 40 4 - 30 - - - -...