BF512 Datasheet | NXP Semiconductors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513). PINNING - SOT23 1 2 3 = gate = drain = source MARKING CODE BF510 = S6p BF511 = S7p BF512 = S8p BF513 = S9p BF510 to 513 handbook, halfpage 3 d s g 1 Top view MAM385 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage Drain current (DC or average) Total power dissipation up to Tamb = 40 °C Drain current VDS = 10 V; VGS = 0 Transfer admittance (mon source) VDS = 10 V; VGS = 0; f = 1 k Hz Feedback capacitance VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 m A Noise figure at optimum source admittance GS = 1 m S; - BS = 3 m S; f = 100 MHz VDS = 10 V; VGS = 0 VDS = 10 V; ID = 5 m A F F typ. typ. 1.5 - 1.5 - - 1.5 - d B 1.5 d B Crs Crs typ. typ. 0.3 - 0.3 - - 0.3 - p F 0.3 p F  yfs  > 2.5 4 6 7 m S IDSS Ptot max. BF510 > < 0.7 3.0 250 511 2.5 7.0 512 6 12 513 10 m A 18 m A m W VDS ID max. max. 20 30 V m A December 1997 Philips Semiconductors Product specification N-channel silicon field-effect transistors RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-gate voltage (open source) Drain current (DC or average) Gate current Total power dissipation up to Tamb = 40 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm. STATIC CHARACTERISTICS Tamb = 25 °C BF510 Gate cut-off current - VGS = 0.2 V; VDS = 0 Gate-drain breakdown voltage IS = 0; - ID = 10 µA Drain current VDS = 10 V; VGS = 0 Gate-source cut-off voltage ID =...