NXP Semiconductors BF550
This document contains data from the objective specification for product development. This document contains data from the preliminary specification.FEATURES
● Low current (max. 25 mA)● Low voltage (max. 40 V).
APPLICATIONS
● Medium frequency applications in thick and thin film circuits. PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
DESCRIPTION
PNP medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF550 MARKING CODE(1) LA* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BF550 NAME − PACKAGEDESCRIPTION
plastic surface mounted package; 3 leads VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1.