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BF550 Datasheet PDF

NXP Semiconductors BF550

This document contains data from the objective specification for product development. This document contains data from the preliminary specification.
Part No. BF550
Datasheet BF550 Download
Manufacturer
NXP Semiconductors
Description PNP medium frequency transistor
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BF550 datasheet page 1 preview

FEATURES

● Low current (max. 25 mA)
● Low voltage (max. 40 V).

APPLICATIONS

● Medium frequency applications in thick and thin film circuits. PINNING PIN 1 2 3 base emitter collector

DESCRIPTION

DESCRIPTION

PNP medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF550 MARKING CODE(1) LA* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BF550 NAME − PACKAGE

DESCRIPTION

plastic surface mounted package; 3 leads VERSION SOT23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1.
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