D High power gain D Low noise figure
1
BF550/BF550R
1
23
94 9280
BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation Tamb ≤ 60°C
Junction temperature
Parameters
Maximum Thermal Resistance
Parameters Junction ambient on glass fibre printed board (25 x 20 x 15) mm3 plated with 35 mm Cu
32
95 10527
BF550R Marking: G5 Plastic case (SOT.
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BF550. For precise diagrams, and layout, please refer to the original PDF.
Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 92...
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eatures D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 9280 BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Parameters Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 15) mm3 plated with 35 mm Cu 32 95 10527 BF550R Marking: G5 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Value 40 40 4 25 200 125 Unit V V V mA mW °C Symbol Rt
BF550 Datasheet
