BF556C Datasheet | NXP Semiconductors

FEATURES - Low leakage level (typ. 500 f A) - High gain - Low cut-off voltage. BF556A; BF556B; BF556C handbook, halfpage 2 1 g d s APPLICATIONS - Impedance converters in e.g. electret microphones and infra-red detectors - VHF amplifiers in oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate‘ DESCRIPTION source CAUTION Top view MAM036 Marking codes: BF556A: M84. BF556B: M85. BF556C: M86. Fig.1 Simplified outline and symbol. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS PARAMETER drain-source voltage (DC) gate-source cut-off voltage drain current BF556A BF556B BF556C Ptot yfs total power dissipation forward transfer admittance up to Tamb = 25 °C VGS = 0; VDS = 15 V ID = 200 µA; VDS = 15 V VGS = 0; VDS = 15 V 3 6 11 - 4.5 7 13 18 250 - m A m A m A m W m S CONDITIONS - - 0.5 MIN. MAX. ±30 - 7.5 UNIT V V 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj Note PARAMETER drain-source voltage (DC) gate-source voltage gate-drain voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 25 °C; note 1 open drain open source CONDITIONS BF556A; BF556B; BF556C MIN. - - - - - - 65 - MAX. ±30 - 30 - 30 10 250 150 150 V V V UNIT m A m W °C °C 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm2. STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise...