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BF556B - N-channel silicon junction field-effect transistors

General Description

N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

Marking codes: BF556A: M84.

BF556B: M85.

Key Features

  • Low leakage level (typ. 500 fA).
  • High gain.
  • Low cut-off voltage. BF556A; BF556B; BF556C handbook, halfpage 2 1 g d s.

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Full PDF Text Transcription for BF556B (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File unde...

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ansistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage. BF556A; BF556B; BF556C handbook, halfpage 2 1 g d s APPLICATIONS • Impedance converters in e.g. electret microphones and infra-red detectors • VHF amplifiers in oscillators and mixers. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

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