BF556B Description
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate‘ DESCRIPTION source CAUTION 3 Top view MAM036 Marking codes: Fig.1 Simplified outline and symbol.
BF556B Key Features
- Low leakage level (typ. 500 fA)
- High gain
- Low cut-off voltage
BF556B Applications
- Impedance converters in e.g. electret microphones and infra-red detectors