BF554 Datasheet | Diotec Semiconductor

BF 554 NPN High Frequency Transistors Surface mount Si-Epitaxial Planar Transistors Si-Epitaxial Planar Transistoren für die Oberflächenmontage Power dissipation - Verlustleistung Plastic case Kunststoffgehäuse Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert NPN 250 m W SOT-23 (TO-236) 0.01 g Dimensions / Maße in mm 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM Tj TS Grenzwerte (TA = 25/C) BF 554 20 V 30 V 5V 250 m W 1) 30 m A 30 m A 150/C - 65…+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 100/C VCE = 10 V, IC = 1 m A ICB0 ICB0 h FE - - 60 Kennwerte (Tj = 25/C) Typ. - - - Max. 100 n A 10 :A 250 DC current gain - Kollektor-Basis-Stromverhältnis 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 2 01.11.2003 High Frequency Transistors Characteristics (Tj = 25/C) Min. Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 10 V, IC = 1 m A Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 m A, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz f = 200 k Hz f = 1 MHz f = 100 MHz Output admittance - Ausgangs-Leitwert VCE = 10 V, IC = 1 m A, f = 0 10 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht - umgebende Luft hoe - Rth A 4 :S f T CCB0 F F F - - - - - 250 MHz 0.6 p F 1.5 d B 1.2 d B 3 d B VBEon -...