BF554 Datasheet | Siemens Semiconductor Group

NPN Silicon RF Transistor q BF 554 For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type BF 554 Marking CC Ordering Code (tape and reel) Q62702-F1042 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TA ≤ 25 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 20 30 5 30 280 150 - 65 … + 150 Unit V m A m W ˚C K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group BF 554 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 m A, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 1 m A, VCE = 10 V Base-emitter voltage IC = 1 m A, VCE = 10 V AC Characteristics Transition frequency IC = 1 m A, VCE = 10 V, f = 100 MHz Collector-base capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure IC = 1 m A, VCE = 10 V f = 200 k Hz, g S = 2 m S f = 1 MHz, g S = 1.5 m S f = 100 MHz, g S = 10 m S Output conductance IC = 1 m A, VCE = 10 V, f = 0 10 MHz f T Ccb F - - - g22e - 1.5 1.2 3 4 - - - - µS Values typ. max. Unit V(BR) CE0 ICB0 h FE VBE - 60 - - - - 0.7 - 100 250 - V n A -...