Download the BF550R datasheet PDF.
This datasheet also covers the BF550 variant, as both devices belong to the same silicon pnp hf transistor family and are provided as variant models within a single manufacturer datasheet.
Key Features
D High power gain D Low noise figure
1
BF550/BF550R
1
23
94 9280
BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation Tamb ≤ 60°C
Junction temperature
Parameters
Maximum Thermal Resistance
Parameters Junction ambient on glass fibre printed board (25 x 20 x 15) mm3 plated with 35 mm Cu
32
95 10527
BF550R Marking: G5 Plastic case (SOT.
Full PDF Text Transcription for BF550R (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BF550R. For precise diagrams, and layout, please refer to the original PDF.
Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 92...
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eatures D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 9280 BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Parameters Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 15) mm3 plated with 35 mm Cu 32 95 10527 BF550R Marking: G5 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Value 40 40 4 25 200 125 Unit V V V mA mW °C Symbol Rt
BF550R Datasheet
