BF550 Datasheet
BF550 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
PNP Silicon RF Transistor q For common emitter amplifier stages up to 300 MHz q For mixer applications in AM/FM radios and VHF TV tuners q Low feedback capacitance due to shield diffusion q Controlled.
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BF550 Datasheet (NXP Semiconductors)
NXP Semiconductors
DESCRIPTION PNP medium frequency transistor in a SOT23 plastic package. MARKING TYPE NUMBER BF550 MARKING CODE(1) LA* Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in .
* Low current (max. 25 mA)
* Low voltage (max. 40 V).
APPLICATIONS
* Medium frequency applications in thick and thin film
circuits.
PINNING
PIN 1 2 3
base emitter collector
DESCRIPTION
DESCRIPTION
PNP medium frequency transistor in a SOT23 plastic package.
MARKING
TYPE NUMBER BF550
MARKING CO.
BF550 Datasheet (TEMIC Semiconductors)
TEMIC Semiconductors
Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 9280 BF550 Marking: LA Plastic.
D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 9280 BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction.
BF550 Datasheet (Kexin Semiconductor)
Kexin Semiconductor
SMD Type TransistIoCrs PNP Medium Frequency Transistor BF550 Features Low current (max. 25 mA). Low voltage (max. 40 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -.
Low current (max. 25 mA). Low voltage (max. 40 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol C.