NXP Semiconductors BF824W
This document contains data from the objective specification for product development. This document contains data from the preliminary specification.| Part No. | BF824W |
|---|---|
| Datasheet | BF824W Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP medium frequency transistor |
| Buy | Stock & Price |
FEATURES
● Low current (max. 25 mA)● Low voltage (max. 30 V).
APPLICATIONS
● RF stages in FM front-ends in common base configuration.DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic package. MARKING TYPE NUMBER BF824W MARKING CODE(1) F8∗ Note 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
handbook, halfpage 3 3 1 1 Top view 2 MAM048 2 Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. − − − − − − −65 − −65 MAX. −30 −30 −4 −25 −25 200 +150...
