NXP Semiconductors BF862
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.FEATURES
● High transition frequency for excellent sensitivity in AM car radios● High transfer admittance.
APPLICATIONS
● Pre-amplifiers in AM car radios.DESCRIPTION
Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable. PINNING SOT23 PIN 1 source 2 drain 3 gateDESCRIPTION
handbook, halfpa2ge 1 g d s Top view 3 MAM036 Marking code: 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS Ptot yfs Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CONDITIONS MIN. 0.3 10 Ts 90 C 35 TYP. 0.8 45 MAX. 20 1.2 25 300 150 UNIT V V mA mW mS C CAUTION 2000 Jan 05 2 NXP Semiconductors N-channel junction FET Product specification BF862 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDG VGS IDS IG Ptot Tstg Tj PARAMETER drain-source volta...