NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.
The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.
| Part number | BFG135 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 269.06 KB |
| Description | NPN 7GHz wideband transistor |
| Datasheet |
 BFG135 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| BFG135A | NPN Silicon RF Transistor | Siemens Semiconductor Group |
| BFG135A | NPN Silicon RF Transistor | Infineon Technologies AG |
| BFG193 | NPN Transistor | INCHANGE |
| BFG193 | NPN Silicon RF Transistor | Siemens Semiconductor Group |
| BFG193 | NPN Silicon RF Transistor | Infineon Technologies AG |
| Part Number | Description |
|---|---|
| BFG10 | NPN 2 GHz RF power transistor |
| BFG10W | UHF power transistor |
| BFG10X | UHF power transistor |
| BFG11 | NPN 2 GHz RF power transistor |
| BFG11W | NPN 2 GHz power transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
