Datasheet Summary
BFG 135A
NPN Silicon RF Transistor
- For low-distortion broadband output amplifier stages in antenna and telemunications systems up to 2 GHz at collector currents from 70mA to 130mA
- Power amplifiers for DECT and PCN systems
- Integrated emitter ballast resistor
- fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 135A BFG135A Q62702-F1322 1=E 2=B 3=E 4=C
Package SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 25 25 2 150 20 mW 1000 150
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