| Part Number | BFG135A |
|---|---|
| Manufacturer | Infineon |
| Overview | BFG 135A NPN Silicon RF Transistor For low-distortion broadband amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 70 mA to 130 mA Power amplifier. ectrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC. |
BFG135A Datasheet
The BFG135A is a NPN Silicon RF Transistor.
| Part Number | BFG135A |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifi. or Group 1 Dec-16-1996 BFG 135A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 15 120 - V µA 100 nA 50 µA 1 80 250 IC = 1 mA, IB = 0 Collector-emitter cutoff curre. |