Datasheet Summary
BFG 135A
NPN Silicon RF Transistor
For low-distortion broadband amplifier
4 stages in antenna and telemunication systems up to 2 GHz at collector currents from 70 mA to 130 mA
Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHz
3 2 1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFG 135A
Maximum Ratings Parameter
Marking BFG135A 1=E
Pin Configuration 2=B 3=E 4=C
Package SOT-223
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value 15 25 25 2 150 20 1 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage...
