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BFG197 - NPN 7 GHz wideband transistor

General Description

The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope.

It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.

Key Features

  • High power gain.
  • Low noise figure.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7 GHz wideband transistor FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.