NXP Semiconductors BFG197
The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems.| Part No. | BFG197 |
|---|---|
| Datasheet | BFG197 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN 7 GHz wideband transistor |
| Buy | Stock & Price |
FEATURES
● High power gain● Low noise figure
● Gold metallization ensures excellent reliability.
DESCRIPTION
PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4DESCRIPTION
collector base emitter emitter collector emitter base emitter collector emitter base emitter BFG197; BFG197/X; BFG197/XR BFG197 (Fig.1) Code: V5 handbook, 2 columns 4 3 1 Top view 2 MSB014 BFG197/X (Fig.1) Code: V13 Fig.1 SOT143. BFG197A/XR (Fig.2) Code: V35 handbook, 2 columns 3 4 2 Top view 1 MSB035 Fig.2 SOT143XR. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation feedback capacitance transition frequency maximum unilateral power gain open base DC value up to Ts = 75 °C; note 1 IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 50 mA; VCE = 4 V; f = 2 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 °C; f = 1 GHz IC = 50 mA; VCE = 6 V; Tamb = 25 °C; f = 2 GHz F Note 1. TS is the temperature at the soldering point of the collector tab. noise figure Γs = Γopt; IC = 15 mA; VCE = 8 V; Tamb = 25 °C; f = 1 GHz CONDITIONS open emitter − − − − − − − − − MIN. − − − − 0.85 7.5 16 10 1.7 TYP.
