BFG197
FEATURES
- High power gain
- Low noise figure
- Gold metallization ensures excellent reliability. DESCRIPTION
The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope. It is primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. PINNING PIN 1 2 3 4 1 2 3 4 1 2 3 4 DESCRIPTION collector base emitter emitter collector emitter base emitter collector emitter base emitter
BFG197; BFG197/X; BFG197/XR
BFG197 (Fig.1) Code: V5 handbook, 2 columns 4
1 Top view
MSB014
BFG197/X (Fig.1) Code: V13
Fig.1 SOT143.
BFG197A/XR (Fig.2) Code: V35 handbook, 2 columns 3
2 Top view
MSB035
Fig.2 SOT143XR.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot Cre f T GUM PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation feedback capacitance transition frequency maximum unilateral power gain open base DC value up to Ts = 75 °C; note 1...
